| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition and a resist pattern forming method superior in lithography characteristics and capable of forming a resist pattern of excellent shape, and to provide a nitrogen-containing polymer compound useful for the resist composition. <P>SOLUTION: The resist composition contains a base material component (A) whose solubility for an alkaline developer changes due to action of acid and an acid generating agent component (B) generating acid due to exposure, and the base material component (A) contains the nitrogen-containing polymer compound having a composition unit (a0) including groups expressed by formula (a0) wherein R<SP>21</SP>denotes a hydrogen atom or an organic group, R<SP>27</SP>denotes an alkylene group, a bivalent aliphatic ring group or a bivalent aromatic hydrocarbon group, and R<SP>28</SP>denotes an alkyl group, a monovalent aliphatic ring group or a monovalent aromatic hydrocarbon group, where R<SP>27</SP>and R<SP>28</SP>are mutually coupled to form a ring together with N-C(=O) in the formula. <P>COPYRIGHT: (C)2011,JPO&INPIT |
