| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase an aperture ratio of a semiconductor device using an oxide semiconductor. <P>SOLUTION: A pixel portion and a driver circuit are provided over one substrate. The first thin film transistor in the pixel portion includes: a gate electrode layer over the substrate; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain electrode layers over the oxide semiconductor layer; over the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, a protective insulating layer which is in contact with part of the oxide semiconductor layer; and a pixel electrode layer over the protective insulating layer. The gate electrode layer, gate insulating layer, oxide semiconductor layer, source and drain electrode layers, protective insulating layer, and pixel electrode layer of the first thin film transistor are translucent, and a material of source and drain electrode layers of a second thin film transistor in the driver circuit is different from a material of those of the first thin film transistor, the material being a conductive material having lower resistance than the material of those of the first thin film transistor. <P>COPYRIGHT: (C)2011,JPO&INPIT |
