| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inductively coupled high frequency plasma reactor and a method for processing a semiconductor wafer. <P>SOLUTION: The inductively coupled high frequency plasma reactor 10 includes a plasma source 16 having a plurality of channels 38, 44 in which processing gases are independently supplied to each channel. A gas supply system 20 includes a plurality of gas feed lines 34, 35, 36 each capable of supplying an individual flow rate and gas composition to the plurality of channels 38, 44 of the plasma source 16. Each channel is surrounded by each of independently powered RF coils 54, 56, such that the plasma density can be varied within each of channels 38, 44 of the plasma source 16. In operation, a material layer 66 overlying a semiconductor wafer 28 is either uniformly etched or deposited by localized spatial control of the plasma characteristics at each location 64 across whole of the semiconductor wafer 28. <P>COPYRIGHT: (C)2011,JPO&INPIT |
