| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device capable of uniformly processing a substrate surface. SOLUTION: This plasma processing device includes: a lower electrode 22 arranged in a chamber 12 for installing a substrate 21 thereon; a lower plate 30 formed in an upper part of the lower electrode 22; a chucking part 23 for fixing the substrate 21 to the lower plate 30; and a gas supply means 27 penetrating the lower plate 30 for supplying gas. In the plasma processing device, a recessed part having a diameter smaller than that of the substrate 21 is formed on the lower plate 30; a projecting curved part 25 is formed on the bottom of the recessed part; the top of the curved surface 25 is formed at a height equal to that of a circumferential surface of the lower plate 30 or lower than the circumferential surface of the lower plate 30; the substrate 21 is fixed by being sandwiched between the circumferential surface of the lower plate 30 and the chucking part 23; and the gas is supplied between the substrate 21 and the recessed part of the lower plate 30 by the gas supply means 27. COPYRIGHT: (C)2011,JPO&INPIT |
