| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device improving the characteristics of a forward current relative to forward bias. SOLUTION: The semiconductor device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor region provided above a surface of the semiconductor layer with a predetermined space left between them, and a metal layer formed on surfaces of the semiconductor layer and the semiconductor region. The metal layer constitutes a Schottky barrier at an interface between it and the semiconductor layer and is in ohmic contact with the semiconductor region at the interface. The lateral width dimension of the first semiconductor region is of a distance with which the semiconductor region is influenced by the adjacent Schottky barrier. COPYRIGHT: (C)2011,JPO&INPIT |
