| 摘要 |
PROBLEM TO BE SOLVED: To provide a current control type drive circuit having a small energy loss by increasing a switching speed in a base current control type drive circuit for driving a BJT type SiC semiconductor device. SOLUTION: The current control type drive circuit 100 includes a first control circuit 20 for applying a first drive voltage 21 for supplying a base current when starting up the SiC-BJT in the switching operation of an SiC-BJT 200 at a frequency of not less than 20 kHz, a second control circuit 30 for applying a second drive voltage 31 for holding a base current required for continuing to drive the SiC-BJT, and a third control circuit 40 for applying a third drive voltage 41 for removing the base current when the SiC-BJT stops. In the current control type drive circuit 100, the third drive voltage has a reversed polarity to the first drive voltage, a value of the first drive voltage is set larger than that of the second drive voltage, and the application time of the first drive voltage is set to 1μsecond or smaller. COPYRIGHT: (C)2011,JPO&INPIT
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