| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon substrate which assures and improves a gettering capability to be adaptable to the thinning of thickness. SOLUTION: The silicon substrate is manufactured by using a silicon single crystal grown by a CZ method with a nitrogen concentration of 5.0×10<SP>12</SP>to 1.0×10<SP>14</SP>atoms/cm<SP>3</SP>and an initial oxygen concentration of 1.4×10<SP>18</SP>to 1.6×10<SP>18</SP>atoms/cm<SP>3</SP>. A device is formed on its top surface to a thickness of≤40μm and exogenous gettering which generates a residual stress of 5 to 200 Mpa is imparted to the reverse surface of the silicon substrate. COPYRIGHT: (C)2011,JPO&INPIT
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