| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for achieving improvement in the parasitic resistance in FINFETs. SOLUTION: In the FINFET, a sidewall SW is formed of a laminated film. Specifically, the sidewall SW is composed of a silicon oxide film OX1, a silicon nitride film SN1 formed on the silicon oxide film OX1, and a silicon oxide film OX2 formed on the silicon nitride film SN1. The sidewall SW is not formed on the side wall of a fin FIN1. Thus, the sidewall SW is formed on the side wall of a gate electrode G1 and the sidewall SW is not formed on the side wall of the fin FIN1. COPYRIGHT: (C)2011,JPO&INPIT |
