| 摘要 |
A semiconductor device includes: a trench formed on an interlayer insulating film on a semiconductor substrate; a first barrier metal film formed to cover the bottom and sidewalls of the trench, the first barrier metal film being comprised of an electric conductor containing a platinum-group element, a refractory metal, and nitrogen; and a metal film formed on the first barrier metal film in the trench. The amount of nitrogen decreases in the thickness direction of the first barrier metal film toward the metal film.
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