| 摘要 |
Embodiments of the invention provide apparatuses for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In one embodiment, an inlet manifold assembly is provided which includes an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly and injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The injection holes have a first plurality of injection holes extending towards or substantially towards a central axis of the centralized channel and the injection holes have a second plurality of injection holes extending tangential or substantially tangential towards the sidewall of the centralized channel. |
