| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus, along with a method of controlling the same, for stabilizing wafer processing characteristics, by measuring the temperature of a plasma resistant wall material so as to carry out temperature control, even in such arrangement that the materials of the same quality are in a line without changing the plasma resistant wall material in a processing chamber of the plasma processing apparatus. <P>SOLUTION: The plasma processing apparatus that processes a wafer mounted on an upper surface of a sample stage disposed in the processing chamber of a vacuum container by using plasma includes: dielectric plate members 103 and 104 which are disposed opposite to the upper surface of the sample stage in an upper direction of the processing chamber and which are supplied into the processing chamber by allowing electric field for forming the plasma to be transmitted into the processing chamber; a member 202 which is disposed in the plate members 103 and 104 so as to reflect a predetermined range of electromagnetic wave which is transmitted into the plate members 103 and 104; a sensor 110 for detecting the electromagnetic wave emitted from the member 202; and a detector for detecting the temperature of the member based on a signal from the sensor 110. In the plasma processing apparatus, the processing operation is controlled by using the detected results of the detector. <P>COPYRIGHT: (C)2011,JPO&INPIT |
