| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device with suppression to interface leakage current, even when a passivation film is formed. SOLUTION: The nitride semiconductor device includes a semiconductor-layer laminate 102 formed on a substrate 101, a first ohmic electrode 131 and a Schottky electrode 132 formed on the semiconductor-layer laminate 102 with an interval in-between, and a passivation film 141 covering the semiconductor-layer laminate 102. The semiconductor-layer laminate 102 includes a first nitride-semiconductor layer 122, a second nitride-semiconductor layer 123, and a p-type third nitride semiconductor 124 formed sequentially on the substrate 101. The third nitride-semiconductor layer 124 has a p-type impurity and is formed in between the first ohmic electrode 131 and the Schottky electrode 132, as well as, selectively formed so as to be in contact with the Schottky electrode 132. COPYRIGHT: (C)2011,JPO&INPIT |
