发明名称 |
PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE |
摘要 |
Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly contacting the first and second electrodes. Forming the memory element can include forming a programmable portion of the memory element isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element. Other embodiments are described.
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申请公布号 |
US2011065235(A1) |
申请公布日期 |
2011.03.17 |
申请号 |
US20100950827 |
申请日期 |
2010.11.19 |
申请人 |
LIU JUN;VIOLETTE MICHAEL P |
发明人 |
LIU JUN;VIOLETTE MICHAEL P. |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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