发明名称 |
MOSFET with a Nanowire Channel and Fully Silicided (FUSI) Wrapped Around Gate |
摘要 |
Nanowire-channel metal oxide semiconductor field effect transistors (MOSFETs) and techniques for the fabrication thereof are provided. In one aspect, a MOSFET includes a nanowire channel; a fully silicided gate surrounding the nanowire channel; and a raised source and drain connected by the nanowire channel. A method of fabricating a MOSFET is also provided.
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申请公布号 |
US2011062411(A1) |
申请公布日期 |
2011.03.17 |
申请号 |
US20090561694 |
申请日期 |
2009.09.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BANGSARUNTIP SARUNYA;COHEN GUY |
分类号 |
H01L29/12;H01L21/336;H01L21/762 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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