FIELD EFFECT SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A field effect semiconductor device and a manufacturing method thereof are provided to configure a gate electrode in a double gate electrode structure, thereby increasing a breakdown voltage. CONSTITUTION: The second semiconductor layer(11) is formed on the first side of the first semiconductor layer(10). The third semiconductor layers(12) are formed on both sides of the semiconductor layer. A source(13) and a drain(14) are formed on the third semiconductor layer. The third semiconductor layers are respectively formed on both sides of second semiconductor layer. A gate electrode(15) is formed on the second side of the first semiconductor layer. The gate electrode is formed in a double gate structure.