MOS GATE POWER SEMICONDUCTOR DEVICE

摘要

PURPOSE: A MOS gate power semiconductor device is provided to integrate a diode for inducing a protection operation in a semiconductor switching device, thereby slimming and simplifying a power electronic circuit. CONSTITUTION: A main device area forms an active area and an edge termination area. A sub device area is horizontally formed on an external side of the main device area to include a diode. An anode electrode(540) and a cathode electrode(550) of the diode are exposed on the sub device area. The second conductive wells(322) are formed on the first conductive semiconductor substrate. The first conductive well(325) is formed in the second conductive well located in the sub device area.