| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a negative radiation-sensitive resin composition capable of stably forming a chemically amplified negative resist film which is effectively sensitive to EB (electron beam) or EUV (extreme ultraviolet radiation), is excellent in roughness, etching resistance and sensitivity, and capable of stably forming a high-definition fine pattern. <P>SOLUTION: The negative radiation-sensitive resin composition comprises: an arene-based compound (A) represented by general formula (1) or (2) (wherein a plurality of Rs each independently denote H or 1-8C alkyl, provided that at least one of the plurality of Rs is 1-8C alkyl; and a plurality of Xs each independently denote 1-8C alkylene); an acid crosslinking agent (B); an acid generator (C); an acid diffusion-controlling agent (D); and a solvent (E). <P>COPYRIGHT: (C)2011,JPO&INPIT |
