发明名称 |
HIGH ORIENTATION ALUMINUM NITRIDE CRYSTAL FILM AND METHOD FOR PRODUCING THE SAME |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a highly oriented aluminum nitride polycrystalline film comprising an aggregate of c-axis oriented aluminum nitride single crystals and having excellent crystallinity and denseness. <P>SOLUTION: An aluminum nitride composite film 10 is produced by precipitating aluminum nitride 1 at 150 to 500°C by sputtering on a base material 6 comprising a single crystalα-Al<SB>2</SB>O<SB>3</SB>substrate 3 and an aluminum nitride crystal film 5 formed thereon via an aluminum oxynitride layer 4, and subsequently annealing at a temperature higher than the reaction sputtering temperature and in a range from 250 to 800°C to form a highly oriented aluminum nitride polycrystalline film 1. The highly oriented aluminum nitride polycrystalline film 1 produced by the above method includes an aggregate of c-axis oriented aluminum nitride single crystals 2, and the highly oriented aluminum nitride polycrystalline film has a tilt angle of 30 to 1,300 arcsec and a twist angle of 80 to 4,000 arcsec. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011051862(A) |
申请公布日期 |
2011.03.17 |
申请号 |
JP20090204800 |
申请日期 |
2009.09.04 |
申请人 |
TOHOKU UNIV;TOKUYAMA CORP |
发明人 |
FUKUYAMA HIROYUKI;ZAHRA VASHAEI;AZUMA MASANOBU;IKEDA SUSUMU;TAKADA KAZUYA |
分类号 |
C30B29/38;C23C14/06;C23C14/34;C30B1/04;H01L41/18;H01L41/316;H01L41/39;H01L41/43 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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