| 摘要 |
PROBLEM TO BE SOLVED: To achieve a resistor element capable of obtaining a sufficient resistance value without inducing processing defects of a gate electrode and deterioration in the characteristics of a MISFET in a semiconductor device including the resistor element and the MISFET having the gate electrode containing metal. SOLUTION: The semiconductor includes the resistor element R and the MISFET. The resistor element R includes a first conductive film 12a formed on a semiconductor substrate 10 and containing metal, a second conductive film 17a formed on the first conductive film 12a and containing silicon, and an insulating film 13a formed between the first conductive film 12a and the second conductive film 17a. COPYRIGHT: (C)2011,JPO&INPIT
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