| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of uniformly making a film on a wafer, by reducing occurrence of particles. SOLUTION: The substrate processing apparatus includes: a processing chamber 201 in which a plurality of substrates are stacked and stored; and a gas nozzle 233b which is arranged along the stacking direction of the substrates, and supplies a processing gas to the processing chamber; wherein the gas nozzle 233b has a plurality of gas supply holes 234b formed along the stacking direction of the substrates, and a gas supply pipe 234b, which supplies the processing gas to the gas nozzle 233b, is respectively connected to an upper end and a lower end of the gas nozzle 233b. COPYRIGHT: (C)2011,JPO&INPIT
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