METHOD FOR MANUFACTURING MAGNETORESISTIVE ELEMENT

摘要

Disclosed is a method for manufacturing a magnetoresistive element, wherein a ferromagnetic layer can be highly accurately etched by improving selectivity between the ferromagnetic layer and a nonmagnetic insulating layer. In the method for manufacturing a magnetoresistive element, the second ferromagnetic layer (27) on the MgO layer (nonmagnetic insulating layer) (26) is chemically etched by means of reactive ion etching (RIE) using plasma of a chlorine gas. The second ferromagnetic layer (27) is excellently etched, while suppressing etching of the MgO layer (26), by having the temperature of a substrate at 100-250°C. Thus, the second ferromagnetic layer (27) can be etched, while ensuring high selectivity between the second ferromagnetic layer and the MgO layer (26).