发明名称 FLASH MEMORY DEVICE REDUCING NOISE OF COMMON SOURCE LINE, OPERATING METHOD THEREOF, AND MEMORY SYSTEM INCLUDING THAT
摘要 PURPOSE: A flash memory device reducing noise of a common source line, an operating method thereof, and a memory system including the same are provided to prevent the distribution width of a threshold voltage from being increased due to a noise voltage of a common source line. CONSTITUTION: In a flash memory device reducing noise of a common source line, an operating method thereof, and a memory system including the same, a plurality of memory cells are connected between a bit line and a common source line. Word lines are connected to the memory cells. A common source line feedback circuit(160) is connected to the common source line and detects the voltage of the common source line. A common source line feedback control logic(170) controls one voltage of a selection word line and a selection bit line.
申请公布号 KR20110027435(A) 申请公布日期 2011.03.16
申请号 KR20090085524 申请日期 2009.09.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, YOON HEE;PARK, KI TAE;KIM, BO GEUN
分类号 G11C16/34;G11C16/08;G11C16/24;G11C16/30 主分类号 G11C16/34
代理机构 代理人
主权项
地址