发明名称 |
FLASH MEMORY DEVICE REDUCING NOISE OF COMMON SOURCE LINE, OPERATING METHOD THEREOF, AND MEMORY SYSTEM INCLUDING THAT |
摘要 |
PURPOSE: A flash memory device reducing noise of a common source line, an operating method thereof, and a memory system including the same are provided to prevent the distribution width of a threshold voltage from being increased due to a noise voltage of a common source line. CONSTITUTION: In a flash memory device reducing noise of a common source line, an operating method thereof, and a memory system including the same, a plurality of memory cells are connected between a bit line and a common source line. Word lines are connected to the memory cells. A common source line feedback circuit(160) is connected to the common source line and detects the voltage of the common source line. A common source line feedback control logic(170) controls one voltage of a selection word line and a selection bit line. |
申请公布号 |
KR20110027435(A) |
申请公布日期 |
2011.03.16 |
申请号 |
KR20090085524 |
申请日期 |
2009.09.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, YOON HEE;PARK, KI TAE;KIM, BO GEUN |
分类号 |
G11C16/34;G11C16/08;G11C16/24;G11C16/30 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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