FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A method for manufacturing a semiconductor device and the semiconductor device using the same are provided to facilitate a back-grinding process of a wafer by back-grinding the lower side of a wafer before a penetration electrode is formed on the wafer. CONSTITUTION: A wafer is back-ground and a lower passivation layer is formed(S1). A conductive layer is formed on the lower of the lower passivation layer and a first wafer support substrate is attached to the lower side of the conductive layer(S2). A penetration electrode is formed by filling a penetration hole with conductive materials(S3). A second wafer support substrate is attached to the upper side of an upper passivation layer and the first wafer support substrate is separated from the wafer(S4). A conductive pattern layer is formed by pattering the conductive layer and the second wafer support substrate is separated from the wafer(S5).