SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING OF THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent the deterioration of a device property due to electric field concentration by including a field plate which distributes an electric field concentrated on a gate electrode and a drain electrode. CONSTITUTION: A semiconductor layer(120) is formed on a base substrate(110). The semiconductor layer comprises a lower layer(122) and an upper layer(126) which are successively laminated on the base substrate. A recess structure(130) is formed on the upper layer. A gate structure covers the recess structure. A source electrode(152) and a drain electrode(154) are separated while interposing the gate structure on the semiconductor layer.