METHOD FOR MANUFACTURING SINGLE CRYSTALLINE SILICON FILM ON ANY SUBSTRATE USING LIGHT IRRADIATION

摘要

PURPOSE: A method for manufacturing a single crystal silicon thin film using light irradiation is provided to easily transfer the single crystal silicon thin film to another substrate like a flexible substrate by removing an intermediate oxide layer of an SOI substrate with etchant and light irradiation. CONSTITUTION: An SOI substrate(104) laminated with a silicon oxide layer(102) and a single crystal silicon thin film(103) is prepared on a bulk substrate(101). An etchant or the steam of the etchant is applied to the single crystal silicon thin film. A micro lens array(50) is arranged on the single crystal silicon thin film. Light is irradiated to the single crystal silicon thin film. The silicon oxide layer is removed when the single crystal silicon thin film remains.