| 摘要 |
1324554 Semi-conductor devices COMPAGNIE GENERALE D'ELECTRICITE 19 April 1971 [23 March 1970] 24777/71 Heading H1K An integrated semi-conductor circuit comprises a chip of monocrystalline silicon 1 over whose surface a silicon dioxide layer 2 is formed, e.g. thermally, and is selectively removed by etching over a photolitho mask to expose the silicon in predetermined zones. Thereafter the exposed silicon is etched into a groove leaving the oxide untouched, after which germanium is epitaxially deposited from gas phase to deposit in monocrystalline form 6 in the groove, and in polycrystalline form 5 overlying the oxide (Fig. 3); the latter being removed by abrasion down to the monocrystalline layers. Portions of the chip are masked by coating with photoresistive resin and exposure to ultra-violet light through a mask covering the germanium-silicon interfaces 7 and other interfaces 8. After development and fixation the substrate is exposed at 7, 8 for etching into recesses. Thereafter an insulant layer 9 of, e.g., silica, alumina, silicon nitride, is formed over the entire surface (Fig. 5) and a polycrystalline silicon layer 10 is deposited thereon, e.g. by reduction of silicon chloride, and the opposite face is abraded down to the polycrystalline silicon in the recesses (Fig. 7) to form capsules of monocrystallinegermanium 6 and monocrystalline silicon 12 supported on polycrystalline silicon substrate 10 and insulated by oxide layers 9. A further insulating groove may be formed and filled with, e.g. gallium phosphide; and the capsules are separately disposed on the substrate (Fig. 8). Diodes and transistors may be formed by thermal doping through an oxide mask into the gallium phosphide and germanium, and by ion implantation into the silicon. The integrated circuit may comprise a germanium infra-red sensitive photodiode, a silicon transistor amplifier, and a gallium phosphide photoluminescent device for conversion to visible light. In the detector germanium is replaceable by silicon, and in the emitter gallium phosphide is replaceable, e.g. by the arsenide, arsenophosphide, or alumino arsenide. |
