SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING OF THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to stably block the flow of currents by shorting two dimensional electron gas by a depletion region generated by a schottky electrode unit. CONSTITUTION: A first semiconductor layer(120) is formed on a base substrate(110). A first ohmic electrode(132) is formed on the central region of the first semiconductor layer. A second ohmic electrode(134) has a ring shape to surround the first ohmic electrode on the edge of the first semiconductor layer. A second semiconductor layer(128) is interposed between the first semiconductor layer and the first ohmic electrode. A schottky electrode unit(140) covers the first ohmic electrode.