| 摘要 |
PURPOSE: A device and a method for manufacturing a semiconductor device are provided to increase staying time of a reaction gas in a reaction chamber, thereby increasing deposition efficiency. CONSTITUTION: A reaction gas supply unit(130) supplies a reaction gas from an upper part to the inside of a reaction chamber. A curtain gas supply unit(170) supplies a curtain gas from a lower part to the inside of the reaction chamber. A shower head(120) is placed on an upper side of the reaction chamber to spray the reaction gas. A substrate support stand(110) faces the shower head on a lower side of the reaction chamber.
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