发明名称 SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING OF THE SAME
摘要 <p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to increase the amount of currents in an erasing operation by making the current flow through a low resistance layer with a low resistivity. CONSTITUTION: A lower layer(132) has a low resistance layer(134) and a high resistance layer(133) with high resistivity. A source electrode(150) is formed on the surface of the high resistance layer. A gate structure(160) is arranged on the surface of the low resistance layer. A drain structure(170) is arranged on the rear of the low resistance layer. A base substrate surrounds the drain structure.</p>
申请公布号 KR20110026797(A) 申请公布日期 2011.03.16
申请号 KR20090084592 申请日期 2009.09.08
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 PARK, KI YEOL;LEE, JUNG HEE;KIM, KI WON;PARK, YOUNG HWAN;JEON, WOO CHUL
分类号 H01L29/78 主分类号 H01L29/78
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