SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING OF THE SAME
摘要
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to increase the amount of currents in an erasing operation by making the current flow through a low resistance layer with a low resistivity. CONSTITUTION: A lower layer(132) has a low resistance layer(134) and a high resistance layer(133) with high resistivity. A source electrode(150) is formed on the surface of the high resistance layer. A gate structure(160) is arranged on the surface of the low resistance layer. A drain structure(170) is arranged on the rear of the low resistance layer. A base substrate surrounds the drain structure.</p>
申请公布号
KR20110026797(A)
申请公布日期
2011.03.16
申请号
KR20090084592
申请日期
2009.09.08
申请人
SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人
PARK, KI YEOL;LEE, JUNG HEE;KIM, KI WON;PARK, YOUNG HWAN;JEON, WOO CHUL