| 摘要 |
PURPOSE: A method for washing a semiconductor wafer is provided to use washing liquid with lower surface tension and lower viscosity than water when the temperature of a surface of a semiconductor wafer is between 30°C and 50°C, thereby effectively removing particles from the surface of the wafer. CONSTITUTION: A particle and a stagnant layer(101) are attached to a surface of a semiconductor wafer(100). A water flow layer(102) is placed in an upper part of the stagnant layer. A lower part of the particle is partially buried in the stagnant layer. A film thickness of the stagnant layer and the water flow layer is thinner than a film thickness using water. A water drop collision fluid layer is generated by a water drop arriving on the surface of the semiconductor wafer.
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