发明名称 |
Semiconductor devices having tensile and/or compressive stress and methods of manufacturing |
摘要 |
A semiconductor device having a tensile and/or compressive strain applied thereto and methods of manufacturing the semiconductor devices to enhance channel strain. The method includes relaxing a gate structure using a low temperature thermal creep process to enhance channel strain. The gate structure undergoes a plastic deformation during the low temperature thermal creep process.
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申请公布号 |
US7906384(B2) |
申请公布日期 |
2011.03.15 |
申请号 |
US20080047379 |
申请日期 |
2008.03.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DYER THOMAS W |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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