发明名称 |
Method for manufacturing a magnetic memory device and magnetic memory device |
摘要 |
A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer.
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申请公布号 |
US7906346(B2) |
申请公布日期 |
2011.03.15 |
申请号 |
US20080187846 |
申请日期 |
2008.08.07 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
UENO SHUICHI;FURUTA HARUO;MATSUDA RYOJI;FUKUMURA TATSUYA;HASEGAWA SHIN;HIRANO SHINYA;CHIBAHARA HIROYUKI;OSHITA HIROSHI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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