| 摘要 |
A thin film transistor includes a polysilicon layer formed over a substrate having a channel region, a source region and a drain region, a conductive layer formed in an upper layer of the polysilicon layer for covering at least a part of the source region and the drain region, an interlayer insulating film formed in a region to cover at least a region including the polysilicon layer, a contact hole formed to penetrate the interlayer insulating film with a depth to expose the conductive layer and a wiring layer formed along a sidewall of the contact hole.
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