首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS MIT EINER IN EINER DOPPELGRABENSTRUKTUR ANGEORDNETEN METALLISCHEN GATEELEKTRODE
摘要
申请公布号
AT498905(T)
申请公布日期
2011.03.15
申请号
AT20070009106T
申请日期
2007.05.05
申请人
UNITED MONOLITHIC SEMICONDUCTORS GMBH
发明人
BEHAMMER, DAG
分类号
H01L21/335;H01L21/28
主分类号
H01L21/335
代理机构
代理人
主权项
地址
您可能感兴趣的专利
SEMICONDUCTOR DEVICE
MIRROR
DEPOLARIZER BASED ON A METAMATERIAL
Configuration Method, Device and System for Resource Occupied by Multicast Control Channel
INK JET PRINT HEAD FRONT FACE HAVING A TEXTURED SUPEROLEOPHOBIC SURFACE AND METHODS FOR MAKING THE SAME
OSCILLATION DETECTOR
Vacuum System Cold Trap Filter
ENERGY DEGRADER AND CHARGED PARTICLE IRRADIATION SYSTEM INCLUDING THE SAME
PROCESS FOR DEPOSITION OF AMORPHOUS CARBON
ACTIVE MATERIAL BASED FASTENERS INCLUDING CABLE TIES AND TWIST TIES
LOGICAL BLOCK ADDRESS MAPPING
WIRELESS COMMUNICATION DEVICE
GRAIN UNLOADING SYSTEM
CACHE LINE ALLOCATION METHOD AND SYSTEM
TIRE BEAD FOR LIGHT HEAVY-WEIGHT VEHICLE
SYSTEM, METHOD, AND APPARATUS FOR TREATING A PLATINUM CONTAMINATED CATALYTIC COMPONENT
SEMICONDUCTOR DEVICE
SLIDER BAG WITH ZIPPER CLOSURE
PHASE ERROR COMPENSATION ARRANGEMENT AND PHASE ERROR COMPENSATION METHOD
SELF-SEALED FLUIDIC CHANNELS FOR NANOPORE ARRAY