发明名称 Method and device for performing cache reading
摘要 In a read method for a memory device, a bit line is set with data in a first memory cell; and the data on the bit line is stored in a register. The data in the register is transferred to a data bus while setting the bit line with data in a second memory cell. In another read method for a memory device, a bit line of a first memory cell is initialized and the bit line is pre-charged with a pre-charge voltage. Data in a memory cell on the bit line is developed, and a register corresponding to the bit line is initialized. The data on the bit line is stored in the register. The data in the register is output externally while performing the initializing, pre-charging, making and initializing to set the bit line with data in a second memory cell.
申请公布号 US7908425(B2) 申请公布日期 2011.03.15
申请号 US20080216003 申请日期 2008.06.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JIN-YUB;HWANG SANG-WON
分类号 G06F12/00;G11C16/02;G06F12/02;G06F12/08;G11C7/00;G11C7/10;G11C11/34;G11C11/409;G11C11/419;G11C16/00;G11C16/04;G11C16/06;G11C16/26 主分类号 G06F12/00
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