| 摘要 |
A method for manufacturing a transistor is disclosed, which is capable of improving matching characteristics of regions within a transistor or among transistors on a wafer, from wafer-to-wafer, or from lot-to-lot. The method includes forming a photoresist pattern on a semiconductor substrate including an isolation layer, forming a drift region by implanting first and second dopant ions using the photoresist pattern as a mask, forming a gate oxide layer on the semiconductor substrate, forming a poly gate on the gate oxide layer, forming source and drain regions a predetermined distance from the poly gate, and forming a silicide layer on the above structure.
|
