| 摘要 |
A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (&Dgr;R/R) compared to known tunnel magnetic sensing elements is disclosed, and a method of manufacturing such a tunneling magnetic sensing element is also disclosed. An enhance layer (second magnetic layer) composed of Co100-XFeX having a Fe composition ratio X of about 30 to 100 at % is disposed on the Mg—O insulating barrier. With this, the magnetostriction λ of the free magnetic layer can be reduced and the resistance change ratio (&Dgr;R/R) can be increased.
|
