发明名称 |
Ge imager for short wavelength infrared |
摘要 |
A germanium (Ge) short wavelength infrared (SWIR) imager and associated fabrication process are provided. The imager comprises a silicon (Si) substrate with doped wells. An array of pin diodes is formed in a relaxed Ge-containing film overlying the Si substrate, each pin diode having a flip-chip interface. There is a Ge/Si interface, and a doped Ge-containing buffer interposed between the Ge-containing film and the Ge/Si interface. An array of Si CMOS readout circuits is bonded to the flip-chip interfaces. Each readout circuit has a zero volt diode bias interface.
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申请公布号 |
US7906825(B2) |
申请公布日期 |
2011.03.15 |
申请号 |
US20090630893 |
申请日期 |
2009.12.04 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
TWEET DOUGLAS J.;MAA JER-SHEN;LEE JONG-JAN;HSU SHENG TENG |
分类号 |
H01L27/14 |
主分类号 |
H01L27/14 |
代理机构 |
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地址 |
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