AMORPH/KRISTALLINE SILIZIUM HETEROSOLARZELLE

摘要

The intention is to specify an amorphous/crystalline Si hetero solar cell whose parameters ensure that the efficiency is improved. According to the prior art, such a solar cell has at least: a crystalline Si absorber layer of one conduction type, arranged on one side of which is an amorphous Si emitter layer of the opposite conduction type and thereon a TCO layer and a front contact, and arranged on the other side of which is a rear contact. According to the invention, then, the amorphous Si emitter layer has a low defect density n(E) of less than 10¹⁹ cm^-3 and is characterized by an Urbach energy of less than 90 meV and the Fermi level (E_F) is near the valence (E_V)- or conduction band edge (E_C) of the amorphous Si emitter layer.