发明名称 Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
摘要 According to the package and the method for manufacturing the package of the present invention, a chip can be formed extremely to be thin, and manufactured at lower cost and higher throughput, and the variations of a chip thickness can be reduced without back grind that causes cracks or polishing marks. In the present invention, a semiconductor film with a thickness of at most 500µm deposited over a substrate serving as a support medium is crystallized with a CW laser light, and a chip having a semiconductor device is formed to have a total thickness of 5µm, preferably at most 2µm by using the crystallized semiconductor film. Consequently, the chip is mounted on an interposer after separating a substrate.
申请公布号 KR101021043(B1) 申请公布日期 2011.03.14
申请号 KR20030092984 申请日期 2003.12.18
申请人 发明人
分类号 H01L23/12;C30B13/24;C30B29/06;H01L21/00;H01L21/20;H01L21/428;H01L21/60;H01L21/68;H01L21/98;H01L25/065;H01L25/10 主分类号 H01L23/12
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