发明名称 |
Sammansatt halvledarsubstrat, halvledaranordning, och tillverkningsmetod |
摘要 |
According to the present invention, a composite semiconductor substrate (1) for epitaxial growth of a compound semiconductor material (1) comprises a ceramic semiconductor support layer (4), and a single crystalline epitaxial layer (3) formed of the compound semi-conductor material on the ceramic semiconductor support layer. |
申请公布号 |
FI20115255(A0) |
申请公布日期 |
2011.03.14 |
申请号 |
FI20110005255 |
申请日期 |
2011.03.14 |
申请人 |
OPTOGAN OY |
发明人 |
BOUGROV, VLADISLAV;ODNOBLYUDOV, MAXIM;NIKOLAEV, VLADIMIR;ROMANOV, ALEXEY |
分类号 |
C30B |
主分类号 |
C30B |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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