| 摘要 |
The disclosure herein relates to a method for fabricating planar, monolithic light emitting diodes and arrays thereof from an N-type intermetallic semiconducting material. Controlled regions of P-type conductivity are formed in the N-type material to form a PN-junction by means of controlled zinc diffusion through a multilayer diffusion-masking system comprising coherent films of silica and phosphorus-doped silica. Metallized ohmic contacts are formed on the top (front) surface and ohmic contact to the backside of the zinc diffused semiconductor material is made by a contact system comprising an alloyed multilayered structure of coherent films of tin, gold, nickel, and gold. Electrical leads and a lens are attached to the fabricated diodes to provided either discrete diodes or monolithic arrays thereof.
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