| 摘要 |
<p>A memory device including: one inert electrode including an electrically conductive material, a part of at least one material of resistivity higher than that of the material of the inert electrode, positioned around the inert electrode, a solid electrolyte positioned on at least one part of the inert electrode and of the part of electrically insulating material, and including metal ions originating from an ionizable metal part positioned on the solid electrolyte. The ratio between the coefficient of electrical resistivity of the material of resistivity higher than that of the material of the inert electrode and the coefficient of electrical resistivity of the material of the inert electrode is equal to or higher than approximately 100, and the coefficient of thermal conductivity of the electrically insulating material is equal to or higher than approximately 10 W·m−1·K−1.</p> |
