| 摘要 |
PURPOSE: An infrared ray light emitting diode and a manufacturing method thereof are provided to improve the brightness by uniformly distributing the current flowing to the light emitting layer from the surface electrode. CONSTITUTION: An infrared ray light emitting diode comprises a supporter(9), a light reflecting layer, an Al-Ga-As system active layer, and an Al-Ga-As system light transmitting layer(2). The light reflecting layer is formed on the upper part of the supporter. The Al-Ga-As system active layer is formed on the upper part the light reflecting layer.
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