| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a decrease in effective capacitor capacity of a capacitor even when the capacitor is made compact through microfabrication, and to provide a method of manufacturing the same. SOLUTION: A dielectric film is formed on a lower electrode including an inner peripheral surface of a recessed part opening formed in the lower electrode, and an upper electrode which faces the lower electrode is formed on the dielectric film including the inside of the recessed part opening. Further, the lower electrode is formed by sequentially laminating a first conductive film, an insulating film, and a second conductive film of low resistance doped with an impurity, and connecting the first conductive film and second conductive film to each other. COPYRIGHT: (C)2011,JPO&INPIT |
