发明名称 HIGH-POWER SEMICONDUCTOR DIE PACKAGES WITH INTEGRATED HEAT-SINK CAPABILITY AND METHODS OF MANUFACTURING THE SAME
摘要 An exemplary semiconductor die package of the invention has a metal-oxide substrate disposed between a first surface of a semiconductor die and a heat-sinking component, with a conductive die clip or one or more electrical interconnect traces disposed between the metal-oxide substrate and the first surface of the semiconductor die. The heat-sinking component may comprise a heat sink, or an adaptor plate to which a heat sink may be coupled. The conductive die clip or electrical trace(s) provides electrical connection(s) to the first surface of the semiconductor die, while the metal-oxide substrate electrically insulates the die from the heat-sinking component, and provides a path of high thermal conductivity between the die and the heat-sinking component. The second surface of the semiconductor die may be left free to connect to a circuit board, or a leadframe or interconnect substrate may be attached to it.
申请公布号 US2011059580(A1) 申请公布日期 2011.03.10
申请号 US20100883044 申请日期 2010.09.15
申请人 发明人 JEON OSEOB;WU CHUNG-LIN;TJHIA EDDY;DOSDOS BIGILDIS C.
分类号 H01L21/50 主分类号 H01L21/50
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