发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF FORMING THEREOF |
摘要 |
Provided is a semiconductor device. The semiconductor device includes: a substrate; an active layer on the substrate; a capping layer on the active layer; source/drain electrodes on the capping layer; a gate electrode on the active layer; and a first void region on a first sidewall of the gate electrode and a second void region on a second sidewall facing the first sidewall.
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申请公布号 |
US2011057237(A1) |
申请公布日期 |
2011.03.10 |
申请号 |
US20100874102 |
申请日期 |
2010.09.01 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
AHN HOKYUN;LIM JONG-WON;YOON HYUNG SUP;CHANG WOOJIN;KIM HAE CHEON |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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