| 摘要 |
The invention relates to a technology for growth of monocrystals. A method for growth of monocrystals based on sodium iodide and cesium iodide comprising the charging of starting raw in crucible, its heating in vacuum in growth chamber to predetermined temperature, filling of chamber with inert gas, melting of raw and subsequent growth of crystal at pressure of inert atmosphere 0.01-0.2 atm. A composition of inert atmosphere is changed in volume of growth chamber by means of introduction of 10-20 volume % helium after phase of radial overgrowth and reaching of crystal height, which equal to 0.5 D, were D – diameter of crystal, gradually during 2-4 hours, at maintenance of starting pressure of gas atmosphere in growth chamber. The invention provides the increasing of rate of crystallization and quality of grown crystals thanks to intensification of convective process heat removal from crystal. |
