| 摘要 |
PURPOSE: A plasma etching method is provided to implement the etching of a silicon nitride film at high speeds by implementing plasma etching using a mixed gas of oxygen and sulfur hexafluoride or carbonyl difluoride. CONSTITUTION: A silicon nitride film on a processed substrate(S) is etched by plasma. A resist pattern comprises an opening which has a larger top opening area compared to a bottom opening area. A processed substrate is carried into a treatment basin(20). The mixed gas of oxygen and sulfur hexafluoride is supplied into the treatment basin.
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