| 摘要 |
PURPOSE: A semiconductor device forming method is provided to form the pattern of various shapes by implementing the trench of various shapes according to the angle of ion injection. CONSTITUTION: A photosensitive pattern is formed on a semiconductor substrate(100). The ion implantation is implemented using the photosensitive pattern as the mask. The ion implantation region is formed on the semiconductor substrate by the ion implantation. A trench(150) is formed by etching the ion implantation region.
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